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SPC6601 N & P Pair MOSFET

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Description

SPC6601 N & P Pair Enhancement Mode MOSFET .
The SPC6601 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

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Datasheet Specifications

Part number
SPC6601
Manufacturer
SYNC POWER
File Size
472.81 KB
Datasheet
SPC6601-SYNCPOWER.pdf
Description
N & P Pair MOSFET

Features

* N-Channel 30V/2.8A,RDS(ON)=68mΩ@VGS=10V 30V/2.3A,RDS(ON)=78mΩ@VGS=4.5V 30V/1.5A,RDS(ON)=108mΩ@VGS=2.5V
* P-Channel -30V/-2.8A,RDS(ON)=105mΩ@VGS=-10V -30V/-2.5A,RDS(ON)=120mΩ@VGS=-4.5V -30V/-1.5A,RDS(ON)=148mΩ@VGS=-2.5V
* Super high density cell design for extremely low RDS(ON)
* Ex

Applications

* such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter

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