SPC6605 mosfet equivalent, n & p pair mosfet.
* N-Channel
20V/3.6A,RDS(ON)=97mΩ@VGS=4.5V 20V/3.1A,RDS(ON)=113mΩ@VGS=2.5V
* P-Channel -20V/-2.4A,RDS(ON)= 128mΩ@VGS=-4.5V -20V/-2.0A,RDS(ON)=188mΩ@VGS=-2.5V
.
such as notebook computer power management and other battery powered circuits where high-side switching, low in-line pow.
The SPC6605 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior swi.
Image gallery
TAGS
Download (Size : 665.72KB)