* N-Channel 30V/2.8A,RDS(ON)=68mΩ@VGS=10V 30V/2.3A,RDS(ON)=78mΩ@VGS=4.5V 30V/1.5A,RDS(ON)=108mΩ@VGS=2.5V
* P-Channel -30V/-2.8A,RDS(ON)=105mΩ@VGS=-10V -30V/-2.5A,.

such as notebook computer power management and other battery powered circuits where high-side switching , low in-line po.

The SPC6601 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior s.

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