SPC6604 datasheet, mosfet equivalent, SYNC POWER

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Features and benefits

* N-Channel 20V/4.0A,RDS(ON)=50mΩ@VGS=4.5V 20V/3.4A,RDS(ON)=60mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=75mΩ@VGS=1.8V
* P-Channel -20V/-3.4A,RDS(ON)=85mΩ@VGS=-4.5V -20V/-2.4A,.

Application

such as notebook computer power management and other battery powered circuits where high-side switching , low in-line po.

Description

The SPC6604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior s.

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