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STPSC20H12 Datasheet, STMicroelectronics

STPSC20H12 diode equivalent, power schottky silicon carbide diode.

STPSC20H12 Avg. rating / M : 1.0 rating-13

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STPSC20H12 Datasheet

Features and benefits


* None or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high voltage periphery
* Operating Tj from -40 °C to 175 °C.

Application


* Solar inverter
* Boost PFC
* Air conditioning equipment
* UPS power supply
* Telecom / Server powe.

Description

The SiC diode, available in TO-220AC, D²PAK and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure w.

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TAGS

STPSC20H12
power
Schottky
silicon
carbide
diode
STPSC20H12-Y
STPSC20H12CWY
STPSC20H065C
STMicroelectronics

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