STPSC20H12-Y datasheet, diode equivalent, STMicroelectronics

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Features and benefits

* AEC-Q101 qualified
* No or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high voltage periphery
* PPAP capabl.

Application

* On board charger Description The SiC diode is an ultra high performance power Schottky diode. It is manufactured u.

Description

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, .

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