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STPSC20H12CWY Datasheet, STMicroelectronics

STPSC20H12CWY diode equivalent, power schottky silicon carbide diode.

STPSC20H12CWY Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 252.98KB)

STPSC20H12CWY Datasheet
STPSC20H12CWY
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 252.98KB)

STPSC20H12CWY Datasheet

Features and benefits


* AEC-Q101 qualified
* No or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high-voltage periphery
* PPAP capabl.

Application


* OBC (On Board Battery chargers)
* PHEV - EV charging stations
* Resonant LLC topology
* PFC functions .

Description

The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Du.

Image gallery

STPSC20H12CWY Page 1 STPSC20H12CWY Page 2 STPSC20H12CWY Page 3

TAGS

STPSC20H12CWY
power
Schottky
silicon
carbide
diode
STMicroelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

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