STPSC20H12CWY Datasheet | STMicroelectronics

Features - AEC-Q101 qualified - No or negligible reverse recovery - Switching behavior independent of temperature - Robust high-voltage periphery - PPAP capable - Operating Tj from -40 °C to 175 °C - ECOPACK2 pliant Applications - OBC (On Board Battery chargers) - PHEV - EV charging stations - Resonant LLC topology - PFC functions (Power Factor Corrector) Description The Si C diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST Si C diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases. DS12793 - Rev 2 - February 2021 For further information contact your local STMicroelectronics sales office. .st. Characteristics Characteristics Table 1. Absolute ratings (limiting values per diode at 25 °C , unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage (Tj = -40 °C to +175 °C) IF(RMS) Forward rms current IF(AV) Average forward current Per diode Tc = 150 °C, DC current Per device 10 A IFRM Repetitive peak forward current Tc =150 °C, Tj = 175 °C, δ = 0.1 A tp = 10 ms sinusoidal Tc = 25...