STPSC20H065C datasheet, diode equivalent, STMicroelectronics

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Features and benefits

* No or negligible reverse recovery
* Switching behavior independent of temperature
* Dedicated to PFC applications
* High forward surge capability Datas.

Application

* High forward surge capability Datasheet - production data Description The SiC diode is an ultrahigh performance .

Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no.

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