STPSC20H065C-Y datasheet, diode equivalent, STMicroelectronics

STPSC20H065C-Y diode equivalent, automotive 650v power schottky silicon carbide diode.

Features and benefits

* No or negligible reverse recovery
* Switching behavior independent of temperature
* Dedicated to PFC applications
* High forward surge capability
* .

Application

* High forward surge capability
* AEC-Q101 qualified
* ECOPACK®2 compliant component
* PPAP capable Dat.

Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no.

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