STPSC20G12-Y diode equivalent, 20a power schottky high surge silicon carbide diode.
* AEC-Q101 qualified and PPAP capable
* None or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high voltage peripher.
* Boost PFC
* HEV/EV OBC (On board battery chargers)
* EV Charging station
Description
The SiC diode, availa.
The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1.
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