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STPSC20G12-Y Datasheet, STMicroelectronics

STPSC20G12-Y diode equivalent, 20a power schottky high surge silicon carbide diode.

STPSC20G12-Y Avg. rating / M : 1.0 rating-11

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STPSC20G12-Y Datasheet

Features and benefits


* AEC-Q101 qualified and PPAP capable
* None or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high voltage peripher.

Application


* Boost PFC
* HEV/EV OBC (On board battery chargers)
* EV Charging station Description The SiC diode, availa.

Description

The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1.

Image gallery

STPSC20G12-Y Page 1 STPSC20G12-Y Page 2 STPSC20G12-Y Page 3

TAGS

STPSC20G12-Y
20A
power
Schottky
high
surge
silicon
carbide
diode
STMicroelectronics

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