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STGST200G65DTAG, STGST200G65DFAG Datasheet - STMicroelectronics

STGST200G65DTAG Automotive-grade trench gate field-stop IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. This device represents an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight.

STGST200G65DTAG Features

* 1 4 23 32 1 STPAK C(4) G(3) E(1, 2) NG3C4E12

* AEC-Q101 qualified

* VCE(sat) = 1.52 V (typ.) @ IC = 200 A

* Positive VCE(sat) temperature coefficient

* Tight parameter distribution

* Low thermal resistance

* Very fast and soft recovery

STGST200G65DFAG-STMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: STGST200G65DTAG, STGST200G65DFAG. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

STGST200G65DTAG, STGST200G65DFAG

Manufacturer:

STMicroelectronics ↗

File Size:

770.75 KB

Description:

Automotive-grade trench gate field-stop igbt.

Note:

This datasheet PDF includes multiple part numbers: STGST200G65DTAG, STGST200G65DFAG.
Please refer to the document for exact specifications by model.

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STGST200G65DTAG STGST200G65DFAG Automotive-grade trench gate field-stop IGBT STMicroelectronics

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