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STGSH80HB65DAG Datasheet, STMicroelectronics

STGSH80HB65DAG igbt equivalent, igbt.

STGSH80HB65DAG Avg. rating / M : 1.0 rating-12

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STGSH80HB65DAG Datasheet

Features and benefits


* AQG 324 qualified
* High-speed switching series
* Maximum junction temperature: TJ = 175 °C
* Low VCE(sat) = 1.7 V (typ.) @ IC = 80 A
* Minimi.

Application


* DC/DC converter for EV/HEV
* On board charger (OBC) Description This device combines two IGBTs and diodes i.

Description

This device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package. The device is part of the HB series IGBTs, which is optimized both in conduction and switching losses for soft com.

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TAGS

STGSH80HB65DAG
IGBT
STGSB200M65DF2AG
STGST200G65DFAG
STG1
STMicroelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

Related datasheet

STGSH80HB65DAG

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