STGSH80HB65DAG igbt equivalent, igbt.
* AQG 324 qualified
* High-speed switching series
* Maximum junction temperature: TJ = 175 °C
*
Low VCE(sat) = 1.7 V (typ.) @ IC = 80 A
* Minimi.
* DC/DC converter for EV/HEV
* On board charger (OBC)
Description
This device combines two IGBTs and diodes i.
This device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package. The device is part of the HB series IGBTs, which is optimized both in conduction and switching losses for soft com.
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