STG15M120F3D7 igbt equivalent, igbt.
* 10 µs of short-circuit withstanding time
* Low VCE(sat) = 1.85 V (typ.) @ IC = 15 A
* Positive VCE(sat) temperature coefficient
* Tight parameter distri.
E
* Industrial motor control
EGCD
* Industrial drives
* Solar inverters
* Uninterruptable power su.
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 258.50KB)