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STG15M120F3D8 - IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.

Features

  • 10 μs of short-circuit withstand time.
  • Low VCE(sat) = 1.85 V (typ. ) at IC = 15 A.
  • Positive VCE(sat) temperature coefficient.
  • Tight parameter distribution.
  • Minimized junction temperature: TJ = 175 °C.

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Full PDF Text Transcription

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STG15M120F3D8 Datasheet 1200 V, 15 A trench gate field‑stop M series low‑loss IGBT die in D8 packing C G Features • 10 μs of short-circuit withstand time • Low VCE(sat) = 1.85 V (typ.) at IC = 15 A • Positive VCE(sat) temperature coefficient • Tight parameter distribution • Minimized junction temperature: TJ = 175 °C Applications E • Motor control EGCD • Industrial drives • PFC • UPS • Solar • General purpose inverter Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
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