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STG200M65F2D8AG - IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.

Features

  • AEC-Q101 qualified.
  • Low-loss series IGBT G.
  • Low VCE(sat) = 1.55 V (typ. ) at IC = 200 A.
  • Positive VCE(sat) temperature coefficient.
  • Tight parameter distribution.
  • Maximum junction temperature: TJ = 175 °C E.
  • 6 µs minimum short-circuit withstanding time at TJ = 150 °C EGCD.

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STG200M65F2D8AG Datasheet Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing C Features • AEC-Q101 qualified • Low-loss series IGBT G • Low VCE(sat) = 1.55 V (typ.) at IC = 200 A • Positive VCE(sat) temperature coefficient • Tight parameter distribution • Maximum junction temperature: TJ = 175 °C E • 6 µs minimum short-circuit withstanding time at TJ = 150 °C EGCD Applications • Main inverter (electric traction) Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
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