STGSB200M65DF2AG igbt equivalent, igbt.
* AEC-Q101 qualified
* 6 μs of minimum short-circuit withstand time
* VCE(sat) = 1.65 V (typ.) @ IC = 200 A
* Tight parameter distribution
* Positive .
* Traction inverter
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop.
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the.
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