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STGSB200M65DF2AG Datasheet, STMicroelectronics

STGSB200M65DF2AG igbt equivalent, igbt.

STGSB200M65DF2AG Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 567.46KB)

STGSB200M65DF2AG Datasheet

Features and benefits


* AEC-Q101 qualified
* 6 μs of minimum short-circuit withstand time
* VCE(sat) = 1.65 V (typ.) @ IC = 200 A
* Tight parameter distribution
* Positive .

Application


* Traction inverter Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop.

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the.

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TAGS

STGSB200M65DF2AG
IGBT
STMicroelectronics

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