STGSB200M65DF2AG datasheet, igbt equivalent, STMicroelectronics

Features and benefits

* AEC-Q101 qualified
* 6 μs of minimum short-circuit withstand time
* VCE(sat) = 1.65 V (typ.) @ IC = 200 A
* Tight parameter distribution
* Positive .

Application

* Traction inverter Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop.

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the.

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