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STGSH80HB65DAG - IGBT

Description

This device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package.

The device is part of the HB series IGBTs, which is optimized both in conduction and switching losses for soft commutation.

Features

  • AQG 324 qualified.
  • High-speed switching series.
  • Maximum junction temperature: TJ = 175 °C.
  • Low VCE(sat) = 1.7 V (typ. ) @ IC = 80 A.
  • Minimized tail current.
  • Tight parameter distribution.
  • Low thermal resistance thanks to DBC substrate.
  • Positive temperature VCE(sat) coefficient.
  • Soft and very fast recovery antiparallel diode.
  • Isolation rating of 3.4 kVrms/min.

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Full PDF Text Transcription

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7 9 9 7 1 6 7 9 6 1 ACEPACK SMIT 6 9 1 7 1 6 ACEPACK SMIT GADG031120220946SA 9 (DC+) T1 1 (G1) 2 (K1) T2 6 (G2) 5 (K2) D1 7 (U) D2 8 (DC-) STGSH80HB65DAG Datasheet Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode Features • AQG 324 qualified • High-speed switching series • Maximum junction temperature: TJ = 175 °C • Low VCE(sat) = 1.7 V (typ.) @ IC = 80 A • Minimized tail current • Tight parameter distribution • Low thermal resistance thanks to DBC substrate • Positive temperature VCE(sat) coefficient • Soft and very fast recovery antiparallel diode • Isolation rating of 3.
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