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STGST200G65DTAG - Automotive-grade trench gate field-stop IGBT

This page provides the datasheet information for the STGST200G65DTAG, a member of the STGST200G65DFAG Automotive-grade trench gate field-stop IGBT family.

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

This device represents an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss are essential.

Features

  • 1 4 23 32 1 STPAK C(4) G(3) E(1, 2) NG3C4E12.
  • AEC-Q101 qualified.
  • VCE(sat) = 1.52 V (typ. ) @ IC = 200 A.
  • Positive VCE(sat) temperature coefficient.
  • Tight parameter distribution.
  • Low thermal resistance.
  • Very fast and soft recovery antiparallel diode.

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Datasheet preview – STGST200G65DTAG

Datasheet Details

Part number STGST200G65DTAG
Manufacturer STMicroelectronics
File Size 770.75 KB
Description Automotive-grade trench gate field-stop IGBT
Datasheet download datasheet STGST200G65DTAG Datasheet
Additional preview pages of the STGST200G65DTAG datasheet.

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STGST200G65DFAG, STGST200G65DTAG Datasheet Automotive-grade trench gate field-stop IGBT 650 V, 200 A in a STPAK package 4 Features 1 4 23 32 1 STPAK C(4) G(3) E(1, 2) NG3C4E12 • AEC-Q101 qualified • VCE(sat) = 1.52 V (typ.) @ IC = 200 A • Positive VCE(sat) temperature coefficient • Tight parameter distribution • Low thermal resistance • Very fast and soft recovery antiparallel diode Applications • Main inverter (electric traction) Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. This device represents an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss are essential.
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