STG15M120F3D8 Datasheet, STMicroelectronics

* 10 μs of short-circuit withstand time
* Low VCE(sat) = 1.85 V (typ.) at IC = 15 A
* Positive VCE(sat) temperature coefficient
* Tight parameter distribu.

E
* Motor control EGCD
* Industrial drives
* PFC
* UPS
* Solar
* General purpose inverte.

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the.