STG200G65FD8AG datasheet, igbt equivalent, STMicroelectronics

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Features and benefits

G E EGCD Product status link STG200G65FD8AG
* AEC-Q101 qualified
* Low-loss series IGBT
* Low VCE(sat) = 1.52 V (typ.) at IC = 200 A
* Positive VCE.

Application

* EV/HEV traction inverters Description This device is an IGBT developed using an advanced proprietary trench gat.

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and th.

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