STG200M65F2D8AG datasheet, igbt equivalent, STMicroelectronics

Features and benefits

* AEC-Q101 qualified
* Low-loss series IGBT G
* Low VCE(sat) = 1.55 V (typ.) at IC = 200 A
* Positive VCE(sat) temperature coefficient
* Tight p.

Application

* Main inverter (electric traction) Description This device is an IGBT developed using an advanced proprietary tre.

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the.

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