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STG200M65F2D8AG IGBT

STG200M65F2D8AG Description

STG200M65F2D8AG Datasheet Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing C .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

STG200M65F2D8AG Features

* AEC-Q101 qualified
* Low-loss series IGBT G
* Low VCE(sat) = 1.55 V (typ. ) at IC = 200 A
* Positive VCE(sat) temperature coefficient
* Tight parameter distribution
* Maximum junction temperature: TJ = 175 °C E
* 6 µs minimum short-ci

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IGBT STMicroelectronics
STMicroelectronics STG200M65F2D8AG-like datasheet