STGST200G65DFAG datasheet, igbt equivalent, STMicroelectronics

Features and benefits

1 4 23 32 1 STPAK C(4) G(3) E(1, 2) NG3C4E12
* AEC-Q101 qualified
* VCE(sat) = 1.52 V (typ.) @ IC = 200 A
* Positive VCE(sat) temperature coefficient.

Application

* EV Inverter Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop struc.

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. This device represents an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss are essential. Furthermore, a po.

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