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STGST200G65DFAG Datasheet, STMicroelectronics

STGST200G65DFAG igbt equivalent, automotive-grade trench gate field-stop igbt.

STGST200G65DFAG Avg. rating / M : 1.0 rating-11

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STGST200G65DFAG Datasheet

Features and benefits

1 4 23 32 1 STPAK C(4) G(3) E(1, 2) NG3C4E12
* AEC-Q101 qualified
* VCE(sat) = 1.52 V (typ.) @ IC = 200 A
* Positive VCE(sat) temperature coefficient.

Application


* EV Inverter Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop struc.

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. This device represents an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss are essential. Furthermore, a po.

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TAGS

STGST200G65DFAG
Automotive-grade
trench
gate
field-stop
IGBT
STGSB200M65DF2AG
STGSH80HB65DAG
STG1
STMicroelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

Related datasheet

STGST200G65DFAG

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