STGST200G65DFAG igbt equivalent, automotive-grade trench gate field-stop igbt.
1
4
23
32
1
STPAK
C(4)
G(3)
E(1, 2)
NG3C4E12
* AEC-Q101 qualified
* VCE(sat) = 1.52 V (typ.) @ IC = 200 A
* Positive VCE(sat) temperature coefficient.
* EV Inverter
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop struc.
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. This device represents an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss are essential. Furthermore, a po.
Image gallery
TAGS
Download (Size : 366.75KB)