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STGHU30M65DF2AG Datasheet, STMicroelectronics

STGHU30M65DF2AG igbt equivalent, automotive-grade trench gate field-stop igbt.

STGHU30M65DF2AG Avg. rating / M : 1.0 rating-11

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STGHU30M65DF2AG Datasheet

Features and benefits

TAB 7 1 HU3PAK C(TAB)
* AEC-Q101 qualified
* Maximum junction temperature: TJ = 175 °C
* 6 μs of minimum short-circuit withstand time
* VCE(sat) = 1.

Application

G(1) K(2) E(3,4,5,6,7)
* Automotive motor control
* e-compressor
* Industrial motor control
* Power su.

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and th.

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TAGS

STGHU30M65DF2AG
Automotive-grade
trench
gate
field-stop
IGBT
STMicroelectronics

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