STGH30H65DFB-2AG datasheet, igbt equivalent, STMicroelectronics

Features and benefits

* AEC-Q101 qualified
* High-speed switching series
* Maximum junction temperature: TJ = 175 °C
* VCE(sat) = 1.55 V (typ.) @ IC = 30 A
* Safer parallel.

Application

* DC/DC converter for EV/HEV
* HVAC and climate control Description This device is an IGBT developed using an ad.

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency .

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