STGH30H65DFB-2AG
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
Key Features
- AEC-Q101 qualified
- High-speed switching series
- Maximum junction temperature: TJ = 175 °C
- VCE(sat) = 1.55 V (typ.) @ IC = 30 A
- Safer paralleling
- Tight parameter distribution
Applications
- DC/DC converter for EV/HEV
