SCTH90N65G2V-7 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code VDS RDS(on) max. SCTH90N65G2V-7 650 V 24 mΩ
* Very high operating junction temperature capability (TJ = 175 °C)
* Very fast and robust intrinsic.

Application

* Switching applications
* Power supply for renewable energy systems
* High frequency DC-DC converters Desc.

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .

Image gallery