2STC5949 Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Internal schematic diagram Table.
| Part Number | Description |
|---|---|
| 2STC5948 | High power NPN epitaxial planar bipolar transistor |
| 2STC5200 | High power NPN epitaxial planar bipolar transistor |
| 2STC5242 | High power NPN epitaxial planar bipolar transistor |
| 2STC2510 | High power NPN epitaxial planar bipolar transistor |
| 2STC4467 | High power NPN epitaxial planar bipolar transistor |
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Internal schematic diagram Table.