Part 2STC5949
Description High power NPN epitaxial planar bipolar transistor
Category Transistor
Manufacturer STMicroelectronics
Size 177.67 KB
STMicroelectronics
2STC5949

Overview

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

  • High breakdown voltage VCEO = 250 V Complementary to 2STA2121 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC