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2STC5949 - High power NPN epitaxial planar bipolar transistor

Description

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.

The resulting transistor shows good gain linearity behaviour.

Figure 1.

Features

  • High breakdown voltage VCEO = 250 V Complementary to 2STA2121 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC.

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2STC5949 www.datasheet4u.com High power NPN epitaxial planar bipolar transistor Features ■ ■ ■ ■ ■ High breakdown voltage VCEO = 250 V Complementary to 2STA2121 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC Applications ■ Audio power amplifier TO-264 Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Marking 2STC5949 Package TO-264 Packaging Tube Order code 2STC5949 July 2008 Rev 3 1/8 www.st.com 8 Absolute maximum ratings 2STC5949 1 Absolute maximum ratings Table 2.
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