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2STC5949 Datasheet High Power NPN Epitaxial Planar Bipolar Transistor

Manufacturer: STMicroelectronics

Overview: 2STC5949 .. High power NPN epitaxial planar bipolar transistor.

General Description

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.

The resulting transistor shows good gain linearity behaviour.

Figure 1.

Key Features

  • High breakdown voltage VCEO = 250 V Complementary to 2STA2121 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC.

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