2STC5242 transistor equivalent, high power npn epitaxial planar bipolar transistor.
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High breakdown voltage VCEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical fT = 30 MHz
3 2 1
Application
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Audio power ampl.
NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENV.
This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order c.
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