2STC2510 transistor equivalent, high power npn epitaxial planar bipolar transistor.
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High breakdown voltage VCEO = 100 V Complementary to 2STA2510 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC
3 2 1
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Audio power amplifier
TO-3P
Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar t.
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking 2S.
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