2STC5948 - High power NPN epitaxial planar bipolar transistor

STMicroelectronics

Datasheet Details

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology..

High breakdown voltage VCEO = 250 V Complementary to 2STA2120 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC 3 2 1.

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