2ST15300 transistors equivalent, rad-hard npn bipolar transistors.
VCBO
IC(max.)
300 V
5A
* 100 krad
* Linear gain characteristics
* Inductive load ruggedness
HFE at 0.6 V, 250 mA > 55
Tj(max.) 200 °C
Description
The.
and suitable for satellite electrical propulsion, inductive load switches and linear amplifiers.
In case of discrepancie.
The 2ST15300 is a power bipolar transistor able to operate under severe environment conditions and radiation exposure. It offers high reliability performance and immunity to the total ionizing dose (TID) up to 100 krad.
Qualified as per 5201/020 ESC.
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