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2ST2121 - High power PNP epitaxial planar bipolar transistor

General Description

The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.

The resulting transistor shows good gain linearity behaviour.

Figure 1.

Key Features

  • High breakdown voltage VCEO = 250 V Complementary to 2ST5949 Fast switching speed Typical ft = 25 MHz Fully characterized at 125 oC.

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www.DataSheet4U.com 2ST2121 High power PNP epitaxial planar bipolar transistor Preliminary data Features ■ ■ ■ ■ ■ High breakdown voltage VCEO = 250 V Complementary to 2ST5949 Fast switching speed Typical ft = 25 MHz Fully characterized at 125 oC Applications ■ 1 2 TO-3 Audio power amplifier Description The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Marking 2ST2121 Package TO-3 Packaging tray Order code 2ST2121 July 2008 Rev 4 1/8 www.st.com 8 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.