2ST5949 transistor equivalent, npn transistor.
* High breakdown voltage VCEO = 250 V
* Complementary to 2ST2121
* Typical ft = 25 MHz
t(s)
* Fully characterized at 125 oC uc Application rod
* Au.
le The device is a NPN transistor manufactured o using new BiT-LA (Bipolar transistor for linear s amplifier) technology. The resulting transistor b shows good gain linearity behaviour.
1 2
TO-3
Figure 1. Internal schematic diagram
Obsolete Product.
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