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2ST5949 - NPN Transistor

General Description

le The device is a NPN transistor manufactured o using new BiT-LA (Bipolar transistor for linear s amplifier) technology.

The resulting transistor b shows good gain linearity behaviour.

Figure 1.

Key Features

  • High breakdown voltage VCEO = 250 V.
  • Complementary to 2ST2121.
  • Typical ft = 25 MHz t(s).
  • Fully characterized at 125 oC uc.

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2ST5949 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 250 V ■ Complementary to 2ST2121 ■ Typical ft = 25 MHz t(s) ■ Fully characterized at 125 oC uc Application rod ■ Audio power amplifier te P Description le The device is a NPN transistor manufactured o using new BiT-LA (Bipolar transistor for linear s amplifier) technology. The resulting transistor b shows good gain linearity behaviour. 1 2 TO-3 Figure 1. Internal schematic diagram Obsolete Product(s) - O Table 1. Device summary Order code Marking Package Packaging 2ST5949 2ST5949 TO-3 tray November 2008 Rev 4 1/8 www.st.com 8 Absolute maximum ratings 1 Absolute maximum ratings 2ST5949 Table 2.