2ST31A transistor equivalent, low voltage npn power transistor.
* High switching speed
* Good performances in terms of hFE linearity
Application
* Linear and switching industrial applications
Description
The device is manu.
Description
The device is manufactured in planar technology with “base island” layout. The resulting transistor shows hi.
The device is manufactured in planar technology with “base island” layout. The resulting transistor shows high gain performance coupled with low saturation voltage.
TAB
3 2 1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary Order.
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