Polarity V(BR)CEO IC (max.) hFE NPN 60 V 0.8 A 160 PNP -60 V -0.8 A 160 1. at IC = 1 A and VCE = 2 V
* 100 krad
* Linear gain characteristics
* .

and suitable for power MOSFET driver and high peak output current applications, it is qualified in the ESCC system as pe.

The 2ST3360K is a dual NPN and PNP bipolar transistor developed from ST’s RadHard high current density technology and housed in Flat-8 hermetic package. Both NPN and PNP transistors offer linear and complementary behavior, fast switching and best in .

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