2STC4467 transistor equivalent, high power npn epitaxial planar bipolar transistor.
* High breakdown voltage VCEO = 120 V
* Complementary to 2STA1694
* Fast-switching speed
t(s)
* Typical ft = 20 MHz c
* Fully characterized at 125 oC.
P
* Audio power amplifier leteDescription soThe device is a NPN transistor manufactured busing new BiT-LA (Bipolar tr.
soThe device is a NPN transistor manufactured busing new BiT-LA (Bipolar transistor for linear Oamplifier) technology. The resulting transistor Obsolete Product(s) -shows good gain linearity behaviour.
3 2 1
TO-3P
Figure 1. Internal schematic diagra.
Image gallery
TAGS
Download (Size : 130.11KB)