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2STC4467 Datasheet High Power NPN Epitaxial Planar Bipolar Transistor

Manufacturer: STMicroelectronics

Overview: 2STC4467 High power NPN epitaxial planar bipolar transistor.

General Description

soThe device is a NPN transistor manufactured busing new BiT-LA (Bipolar transistor for linear Oamplifier) technology.

The resulting transistor Obsolete Product(s) -shows good gain linearity behaviour.

3 2 1 TO-3P Figure 1.

Key Features

  • High breakdown voltage VCEO = 120 V.
  • Complementary to 2STA1694.
  • Fast-switching speed t(s).
  • Typical ft = 20 MHz c.
  • Fully characterized at 125 oC rodu.

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