RJH60F6DPK igbt equivalent, silicon n-channel igbt.
* Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C)
* Built in fast recovery diode in one package
* Tren.
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
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