RJH60F6BDPQ-A0 igbt equivalent, igbt.
* Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode in one package
* Tre.
or use by the military, including but not limited to the development of weapo.
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