RJH60F4DPK igbt equivalent, silicon n channel igbt.
* High speed switching
* Low on-state voltage
* Fast recovery diode
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Preliminary
REJ03G1835-0100 Rev.1.00 Oct 13, 2009
Outline
RENESAS .
such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the .
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