RJH60F3DPK - High Speed Power Switching

Renesas

Datasheet Details

Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power.

Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode in one package.
Trench gate and thin wafer technology.
High speed switching tf = 92 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0199EJ0200 Rev.2.00 Dec 01, 2010 Outline.