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RJH60F5BDPQ-A0 Datasheet, Renesas

RJH60F5BDPQ-A0 igbt equivalent, igbt.

RJH60F5BDPQ-A0 Avg. rating / M : 1.0 rating-11

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RJH60F5BDPQ-A0 Datasheet

Features and benefits


* Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode in one package
* Trench.

Application

or use by the military, including but not limited to the developme.

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

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TAGS

RJH60F5BDPQ-A0
IGBT
RJH60F5DPK
RJH60F5DPQ-A0
RJH60F0DPK
Renesas

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