Silicon Datasheet | Pinout, Features, Price Comparison & PDF

isc Silicon PNP Power Transistors BDT82/84/86/88 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(

ST 2SA1270 PNP Silicon Epitaxial Planar Transistor for switching and general purpose applications. The transistor is subdivided into two groups O and

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD718 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB688 APP

4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS

MRA4001 - MRA4007 SURFACE MOUNT SILICON RECTIFIER DIODES VOLTAGE RANGE: 50 - 1000V CURRENT: 1.0 A Features Diffused junction For surface mounted

SavantIC Semiconductor Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type TIP42/42A/42B/42C APPLICATIONS ·For mediu

PRELIMINARY VERSION nly R820T O High Performance Low Power Advanced Digital TV Silicon Tuner Datasheet orSuite 808, Building 53, No.195, Sec.4, Chung

74HC595D Features ● 8-bit serial input ● 8-bit serial or parallel output ● Tri-state output register ● Shift register with direct clear ● Shift outpu

Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr

2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group acco

BU508AF BU508AF TV Horizontal Output Applications 1 TO-3PF 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Ma

PN2222 PN2222 General Purpose Transistor NPN Epitaxial Silicon Transistor 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25

DISCONTINUED SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The

6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TECHNICAL DATA SHEET NPN

DATA SHEET SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2347 TV UHF Oscillator Applications TV VHF Mixer Applications 2SC2347 Unit: mm Maximum Ratin

Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM

ST 2SC828 / 828A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three grou