A1270
ST 2SA1270
PNP Silicon Epitaxial Planar Transistor for switching and general purpose applications.
The transistor is subdivided into two groups O and Y according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (T a=25o C)
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol -VCBO -VCEO -VEBO
-IC -IB Ptot Tj TS
G S P FORM A IS AVAILABLE
Value 35 30 5 500 100 500 150
-55 to +150
Unit V V V m A m A m W OC OC
РАДИОТЕХ-ТРЕЙД
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ST 2SA1270
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
DC Current Gain at -VCE=1V, -IC=100m A Current Gain Group O
Y at -VCE=6V, -IC=400m A
Collector Cutoff Current at -VCB=35V
Emitter Cutoff Current at -VEB=5V
Collect...
Representative A1270 image (package may vary by manufacturer)
