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PNZ109F Datasheet

Silicon NPN Phototransistor

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Phototransistors
PNZ109F
Silicon NPN Phototransistor
For optical control systems
Features
Flat window design which is suited to optical systems
Built-in filter to cutoff visible light for reducing ambient light noise
Peak sensitivity wavelength matched with infrared light emitting
devices : λp = 900 nm (typ.)
Fast response : tr = 8 µs (typ.)
Long lifetime, high reliability
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
VCBO
VECO
VEBO
IC
PC
Topr
Tstg
Ratings
20
30
3
5
30
150
–25 to +85
–30 to +100
Unit
V
V
V
V
mA
mW
˚C
˚C
ø4.6±0.15
Unit : mm
Glass window
3-ø0.45±0.05
2.54±0.25
3
21
ø5.75 max.
1: Emitter
2: Base
3: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Dark current
Collector photo current
ICEO
ICE(L)
VCE = 10V
VCE = 10V, L = 100 lx*1
0.3
Peak sensitivity wave length
λP VCE = 10V
Acceptance half angle
θ Measured from the optical axis to the half power point
Rise time
Fall time
Collector saturation voltage
tr*2
tf*2
VCE(sat)
VCC = 10V, ICE(L) = 1mA
RL = 100
ICE(L) = 1mA, L = 1000 lx*1
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
typ
0.05
900
40
8
9
0.3
max
2
0.6
Unit
µA
mA
nm
deg.
µs
µs
V
Sig.IN
50
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1


Panasonic Electronic Components Datasheet

PNZ109F Datasheet

Silicon NPN Phototransistor

No Preview Available !

Phototransistors
PNZ109F
PC — Ta
200
160
120
80
40
0
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
ICE(L) — VCE
12
10 900 lx
L = 1000 lx
Ta = 25˚C
T = 2856K
800 lx
700 lx
8 600 lx
6 500 lx
400 lx
4
300 lx
2
0
0 4 8 12 16
Collector to emitter voltage
200 lx
100 lx
50 lx
10 lx
20 24
VCE (V)
10 3
10 2
10
1
10 –1
10 –2
1
ICE(L) — L
VCE = 10V
Ta = 25˚C
T = 2856K
10 10 2 10 3
Illuminance L (lx)
10 4
ICEO — Ta
10 2
VCE = 10V
10
ICE(L) — Ta
10 VCE = 10V
L = 100 lx
T = 2856K
Spectral sensitivity characteristics
100 VCE = 10V
Ta = 25˚C
80
1
10 –1
60
1
40
10 –2
20
10 –3
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
10 –1
– 40
0
40 80 120
Ambient temperature Ta (˚C )
0
600 700 800 900 1000 1100 1200
Wavelength λ (nm)
Directivity characteristics
0˚ 10˚ 20˚
100
90
80 30˚
70
60
40˚
50
40 50˚
30 60˚
20 70˚
80˚
90˚
tr — ICE(L)
10 4
VCC = 10V
Ta = 25˚C
10 3
10 2
RL = 1k
10 500
100
1
10 –1
10 –2
10 –1
1
10 10 2
Collector photo current ICE(L) (mA)
tf — ICE(L)
10 4
VCC = 10V
Ta = 25˚C
10 3
10 2
RL = 1k
10 500
100
1
10 –1
10 –2
10 –1
1
10 10 2
Collector photo current ICE(L) (mA)
2


Part Number PNZ109F
Description Silicon NPN Phototransistor
Maker Panasonic Semiconductor
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PNZ109F Datasheet PDF






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