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PNZ121S - Silicon NPN Phototransistor

Key Features

  • Stable operations in high illuminance region Low dark current 12.5 min. 4.1±0.3 2.0±0.2 ø3.0±0.2 Fast response : tr = 1 µs (typ. ) Small size (ø 3) ceramic package ø0.3±0.05 ø0.45±0.05 0.9±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 10 50.
  • 25 to +85.
  • 30 to +100 Unit V V m.

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Datasheet Details

Part number PNZ121S
Manufacturer Panasonic
File Size 44.19 KB
Description Silicon NPN Phototransistor
Datasheet download datasheet PNZ121S Datasheet

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Phototransistors PNZ121S Silicon NPN Phototransistor Unit : mm For optical control systems Features Stable operations in high illuminance region Low dark current 12.5 min. 4.1±0.3 2.0±0.2 ø3.0±0.2 Fast response : tr = 1 µs (typ.) Small size (ø 3) ceramic package ø0.3±0.05 ø0.45±0.05 0.9±0.