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PNZ121S Datasheet

Silicon NPN Phototransistor

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Phototransistors
PNZ121S
Silicon NPN Phototransistor
For optical control systems
Features
Stable operations in high illuminance region
Low dark current
Fast response : tr = 1 µs (typ.)
Small size (ø 3) ceramic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
VECO
IC
PC
Topr
Tstg
Ratings
20
5
10
50
–25 to +85
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
ø3.0±0.2
Unit : mm
ø0.3±0.05
ø0.45±0.05
0.9±0.15
21
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
ICEO
ICE(L)*3
λP
θ
VCE = 10V
VCE = 10V, L = 1000 lx*1
VCE = 10V
Measured from the optical axis to the half power point
120
Rise time
Fall time
tr*2
tf*2
VCC = 10V, ICE(L) = 1mA, RL = 100
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
typ
1
800
30
1
1.3
max
100
280
Unit
nA
µA
nm
deg.
µs
µs
Sig.IN
50
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
*3 ICE(L) Classifications
Class
Q
ICE(L) (µA)
Color indication
120 to180
Black
R
160 to 200
Red
S
180 to 235
Green
T
210 to 280
1


Panasonic Electronic Components Datasheet

PNZ121S Datasheet

Silicon NPN Phototransistor

No Preview Available !

Phototransistors
PNZ121S
PC — Ta
60
50
40
30
20
10
0
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
ICE(L) — VCE
600
Ta = 25˚C
T = 2856K
500
400 L =2000 lx
1750 lx
300 1500 lx
1250 lx
200 1000 lx
750 lx
100 500 lx
0
0 4 8 12 16
Collector to emitter voltage
250 lx
20 24
VCE (V)
ICE(L) — L
10 4
VCE = 10V
Ta = 25˚C
T = 2856K
10 3
10 2
10
1
10 10 2 10 3 10 4
Illuminance L (lx)
ICEO — Ta
10 3
VCE = 10V
10 2
10
1
ICE(L) — Ta
Spectral sensitivity characteristics
10 3
VCE = 10V
100 VCE = 10V
T = 2856K
Ta = 25˚C
L = 1500 lx
80
1000 lx
60
10 2
40
20
10 –1
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
10
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
0
200 400 600 800 1000 1200
Wavelength λ (nm)
Directivity characteristics
0˚ 10˚ 20˚
100
90
80 30˚
70
60
40˚
50
40 50˚
30 60˚
20 70˚
80˚
90˚
tr — ICE(L)
10 2 VCC = 10V
Ta = 25˚C
10
RL = 1k
1
500
100
10 –1
10 –2
10 –2
10 –1
1
10
Collector photo current ICE(L) (mA)
tf — ICE(L)
10 2 VCC = 10V
Ta = 25˚C
10
RL = 1k
1
500
100
10 –1
10 –2
10 –2
10 –1
1
10
Collector photo current ICE(L) (mA)
2


Part Number PNZ121S
Description Silicon NPN Phototransistor
Maker Panasonic Semiconductor
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PNZ121S Datasheet PDF






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