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PNZ1270 - Silicon NPN Phototransistor

Features

  • High sensitivity Good collector photo current linearity with respect to optical power input Small size designed for easier mounting to printed circuit board 2.8±0.2 1.05±0.1 Type number : Emitter mark (Blue) 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 ø1.8 2 1 45 ˚ 2.2±0.15 (0.7) 0.15 (0.7) 1.8 2.8±0.2 1.8 Fast response : tr = 2.5 µs (typ. ) R0.9 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Op.

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Datasheet Details

Part number PNZ1270
Manufacturer Panasonic
File Size 45.19 KB
Description Silicon NPN Phototransistor
Datasheet download datasheet PNZ1270 Datasheet

Full PDF Text Transcription

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Phototransistors PNZ1270 Silicon NPN Phototransistor Unit : mm For optical control systems 0.5±0.1 Features High sensitivity Good collector photo current linearity with respect to optical power input Small size designed for easier mounting to printed circuit board 2.8±0.2 1.05±0.1 Type number : Emitter mark (Blue) 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 ø1.8 2 1 45 ˚ 2.2±0.15 (0.7) 0.15 (0.7) 1.8 2.8±0.2 1.8 Fast response : tr = 2.5 µs (typ.) R0.9 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 20 50 –25 to +85 –30 to +100 Unit V V mA mW ˚C ˚C 0.85 ± 0.
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