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PNZ123S - Silicon NPN Phototransistor

Features

  • High sensitivity Low dark current Fast response : tr = 3.5 µs (typ. ) Small size (ø 3) ceramic package ø0.3±0.05 ø0.45±0.05 0.9±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 10 50.
  • 25 to +85.
  • 30 to +100 Unit V V mA mW ˚C ˚C 2 1 1: Emitter 2: Collector Electro-Optical Chara.

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Datasheet Details

Part number PNZ123S
Manufacturer Panasonic
File Size 43.29 KB
Description Silicon NPN Phototransistor
Datasheet download datasheet PNZ123S Datasheet

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Full PDF Text Transcription

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Phototransistors PNZ123S Silicon NPN Phototransistor Unit : mm For optical control systems 4.1±0.3 2.0±0.2 12.5 min. ø3.0±0.2 Can be combined with LN62S to form an photo interrupter Features High sensitivity Low dark current Fast response : tr = 3.5 µs (typ.) Small size (ø 3) ceramic package ø0.3±0.05 ø0.45±0.05 0.9±0.
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