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PNZ126S - Silicon NPN Phototransistor

Features

  • High sensitivity Good collector photo current linearity with respect to optical power input Fast response : tr = 2.5 µs (typ. ) Small size (ø 3) ceramic package 4.1±0.3 2.0±0.2 ø3.0±0.2 12.5 min. Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 20 50.
  • 25 to +85.
  • 30 to +100 Unit V V m.

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Datasheet Details

Part number PNZ126S
Manufacturer Panasonic
File Size 45.29 KB
Description Silicon NPN Phototransistor
Datasheet download datasheet PNZ126S Datasheet

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Full PDF Text Transcription

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Phototransistors PNZ126S Silicon NPN Phototransistor Unit : mm For optical control systems Features High sensitivity Good collector photo current linearity with respect to optical power input Fast response : tr = 2.5 µs (typ.) Small size (ø 3) ceramic package 4.1±0.3 2.0±0.2 ø3.0±0.2 12.5 min.
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