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PNZ109L - Silicon NPN Phototransistor

Key Features

  • High sensitivity : ICE(L) = 3.5 mA (min. ) (at L = 100 lx) 12.7 min. 6.3±0.3 Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting devices : λp = 900 nm (typ. ) Fast response : tr = 5 µs (typ. ) Long lifetime, high reliability 3-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± 1. 0± 0 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage E.

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Datasheet Details

Part number PNZ109L
Manufacturer Panasonic
File Size 46.18 KB
Description Silicon NPN Phototransistor
Datasheet download datasheet PNZ109L Datasheet

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Phototransistors PNZ109L Silicon NPN Phototransistor ø4.6±0.15 Unit : mm Glass lens For optical control systems Features High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 100 lx) 12.7 min. 6.3±0.3 Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting devices : λp = 900 nm (typ.) Fast response : tr = 5 µs (typ.) Long lifetime, high reliability 3-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± 1.