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PNZ109CL - Silicon NPN Phototransistor

Features

  • High sensitivity : ICE(L) = 2 mA (min. ) (at L = 500 lx) Wide directional sensitivity for easy use Fast response : tr = 5 µs (typ. ) Signal mixing capability using base pin 1. 0± 0. 15 3.0±0.3 12.7 min. 2.0±0.1 0.2±0.05 3-ø0.45±0.05 2.54±0.25 0 0± 1. 5 .1 Small size (low in height) package ø5.75 max. ø4.2±0.2 45± Resin to cutoff visible light is used 3˚ 3 1 2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Em.

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Datasheet Details

Part number PNZ109CL
Manufacturer Panasonic
File Size 47.06 KB
Description Silicon NPN Phototransistor
Datasheet download datasheet PNZ109CL Datasheet

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Full PDF Text Transcription

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Phototransistors PNZ109CL Silicon NPN Phototransistor Unit : mm For optical control systems Features High sensitivity : ICE(L) = 2 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use Fast response : tr = 5 µs (typ.) Signal mixing capability using base pin 1. 0± 0. 15 3.0±0.3 12.7 min. 2.0±0.1 0.2±0.05 3-ø0.45±0.05 2.54±0.25 0 0± 1. 5 .1 Small size (low in height) package ø5.75 max. ø4.2±0.
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