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PNZ108CL - Silicon NPN Phototransistor

Features

  • High sensitivity : ICE(L) = 3.5 mA (min. ) (at L = 500 lx) Wide directional sensitivity for easy use Fast response : tr = 5 µs (typ. ) Signal mixing capability using base pin 1. 0± 0. 15 3.0±0.3 12.7 min. 2.0±0.1 0.2±0.05 3-ø0.45±0.05 2.54±0.25 0 0± 1. 5 .1 Small size (low in height) package 45± 3˚ Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipati.

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Datasheet Details

Part number PNZ108CL
Manufacturer Panasonic
File Size 46.98 KB
Description Silicon NPN Phototransistor
Datasheet download datasheet PNZ108CL Datasheet

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Phototransistors PNZ108CL Silicon NPN Phototransistor Unit : mm For optical control systems Features High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use Fast response : tr = 5 µs (typ.) Signal mixing capability using base pin 1. 0± 0. 15 3.0±0.3 12.7 min. 2.0±0.1 0.2±0.05 3-ø0.45±0.05 2.54±0.25 0 0± 1. 5 .1 Small size (low in height) package 45± 3˚ Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VCBO VECO VEBO IC PC Topr Tstg Ratings 20 30 3 5 20 100 –25 to +85 –30 to +100 Unit V V V V mA mW ˚C ˚C ø5.75 max. ø4.2±0.
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